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Poster Session


All poster contributions will be presented in one poster session on Monday September 04, 1:15-2:30 PM. Please put up your poster on this day between 9:00 AM and 1:00 PM and take it down until 7 PM.

Awards will be given for the top three posters regarding presentation, technical quality and impact. Members of the conference committee will judge the posters during the session.

Posters should be of DIN-A0 size in portrait orientation.


1:15-2:30 pm POSTER SESSION    
PC-01 Nishant Saxena Indian Institute of Technology Indore, Indea Electrical Conductivity and Threshold Switching Dynamics of GeSbTe Phase Change Memory Devices
PC-02 Benedikt Kersting Aachen Inuversity, Germany Influence of thermal conditions on melt-quenching nanoscale PCM devices
PC-03 Xinxing Sun University Leipzig, Germany Realization of multi-level states in phase-change thin films by very short laser pulse irradiation
PC-04 C. Ruiz de Galarreta University of Exeter, UK The design of practicable beam steering and beam shaping phase-change metasurfaces working at telecom frequencies
PC-05 Yat-Yin Au University of Exeter, UK Infrared Phase-Change Meta-Devices with In-Situ Switching
PC-06 Martin Lewin RWTH Aachen University, Germany Identification of different domains in Sb2Te3 thin films and hexagonal platelets using infrared near-field microscopy
PC-07 S. García-Cuevas Carrillo University of Exeter, UK Towards A Phase-Change Metamaterial Subtractive CMY Display
PC-08 Isom Hilmi Leipzig University, Germany Pulsed laser deposition of epitaxial chalcogenide thin films and superlattice structures thereof
PC-09 Satoshi Sumi Toyota Technological Institute, Japan Magneto-capacitance of [GeTe/Sb2Te3] supper lattice film
PC-10 Hiroki Shirakawa Nagoya University, Japan The atomic configuration of the GeTe/Sb2Te3 superlattice with bandgap
PC-11 Kirill V. Mitrofanov National Institute of Advanced Industrial Science and Technology (AIST), Japan Multi-level switching in GeTe/Sb2Te3 iPCM
PC-12 Oana Cojocaru-Mirédin RWTH Aachen University, Germany Nanoscale investigating of GeTe-Sb2Te3 superlattices by
atom probe tomography
PC-13 Peter C. Schmitz RWTH Aachen University, Germany Massive topological Dirac Semimetals from GeSbTe van-der-Waals Heterostructures
PC-14 Henning Hollermann RWTH Aachen University, Germany Stoichiometry determination of chalcogenide superlattices by means of X-ray diffraction and its limits
PC-15 Paul Vermeulen University of Groningen, The Netherlands Growth and characterization of telluride multilayers using Pulsed Laser Deposition
PC-16 Marvin Kaminski RWTH Aachen University, Germany A first step towards MBE-grown SnTe-based IPCMs: growth and characterization of SnTe(111) on Sb2Te3(0001)
PC-17 Pierre Noé Université Grenoble, France Impact of surface oxidation on the crystallization mechanisms
in GeTe and Ge2Sb2Te5 thin films
PC-18 Shogo Hatayama Tohoku University,  Japan Inverse resistance change behavior of Cr2Ge2Te6 phase change material
PC-19 Yi Shuang Tohoku University, Japan Phase Change Behavior of N-doped Cr-Ge-Te Film
PC-20 Bin Chen University of Groningen,  The Netherlands Dynamics of Ge2Sb2Te5 nanoparticles on graphene
PC-21 Huanglong L Tsinghua University, Cambridge University, China, UK Density functional study of a-GeSex Selectors for PRAM
PC-22 Johannes Reindl RWTH Aachen University, Germany Disorder governed metal insulator transition in Sn1Sb2Te4
PC-23 Konstantinos Konstantinou University of Cambridge, UK Ab initio modelling of ion implantation for doping of phase-change memory materials
PC-24 Yongwoo Kwon Hongik University, Korea Modeling of crystallization by phase-field method
PC-25 Martin Salinga RWTH Aachen University, Germany Supercooled Liquid and Glass Formation in Phase Change Materials
PC-26 Felix-Cosmin Mocanu University of Cambridge, UK A machine-learned interatomic potential for Ge-Sb-Te phase-change materials
PC-27 Shuai Wei RWTH Aachen University, Germany X-Ray Photon Correlation Spectroscopy Reveals Distinct Atomic-scale Relaxation Dynamics Behaviors in Amorphous Phase-Change Materials
PC-28 Matthias Dück RWTH Aachen University, Germany Characterization and Transport Properties of Metastable GeSb2Te4 Thin Films Exhibiting a Decoupling of Microstructure and Disorder
PC-29 M. Gallard Aix Marseille Univ, Université de Toulon,  France Study of the microstructure and stress induced during the crystallization of GeTe thin films
PC-30 Sebastian Walfort RWTH Aachen University, Germany A Micro-Heater Structure for Measuring Crystallization and Relaxation Kinetics in Nanoscale Phase-Change Devices
PC-31 Matteo Cagnoni RWTH Aachen University, Germany Thermoelectric performance of phase-change materials: an atomistic point of view
PC-32 Albert Ratajczak Peter Gruenberg Institute, Germany Characteristics of epitaxial trigonal Ge1Sb2Te4 (0001)
PC-33 Ming Xu Huazhong University of Science and Technology (HUST), China Pressure Tunes the Resonant Bonding in Chalcogenides
PC-34 Nobuki Inoue National Institute of Advanced Industrial Science and Technology (AIST), Japan First-principles study of structural transition pathways of
GeTe/Sb2Te3 superlattices and their I-V characteristics
PC-35 Simone Raoux Helmholtz-Zentrum Berlin für Materialien und Energie, Germany Phase transitions in Ge and Si by metal-induced crystallization
PC-36 Daniele Dragoni Universita’ di Milano – Bicocca, Italy First principles study of the amorphous phase of the In2Te3 compound



03.09.2017 - 05.09.2017

I. Institute of Physics, RWTH Aachen, Germany

Image available on wikimedia commons. Author: Nima j72

The Non-Volatile Memory Technology Symposium (NVMTS 2017) was also be held in Aachen.

European Phase Change and Ovonics Symposium

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