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Technical Program

 

Below you find a list of all invited and contributed talks.

 

Session 1 – New Applications and Optics

September 04            2017     Monday             8:45 – 10:35 AM

8:45 - 9:10

Thomas Taubner

 

Switchable nanophotonic elements enabled by Phase-Change Materials

 

9:10 - 9:35

Robert E. Simpson

 

Applying phase change materials to photonics

 

9:35 - 9:55

Ann-Katrin U. Michel

 

Design parameters for phase-change materials for nanostructure resonance tuning

 

9:55 - 10:15

Boil Pashmakov

 

Operating Modes of Chalcogenide Switching Devices Exhibiting Cognitive Behavior

 

10:15 - 10:35

Arseny M. Alexeev

 

Tunable Dielectric Metadevices Enabled by Phase-Change Materials

 

 

Session 2 – Materials

September 04            2017     Monday             10:55 – 12:20 AM

10:55 - 11:20

Stefania Privitera

 

Role of interfaces on the stability and electrical properties of GeSbTe crystalline structures

 

11:20 - 11:40

Xinglong Ji

 

An ultra-low leakage, highly nonlinear, bidirectional selector for large scale non-volatile memory array

 

11:40 - 12:00

Abdelmalek Benkouider

 

Advanced Design for the Fabrication of High-Density Ge2Sb2Te5 Phase Change Memory by Electrodeposition

 

12:00 - 12:20

Marcus Liebmann

 

Correlating the experimental band structure of Ge2Sb2Te5 to its electronic transport properties

 

 

Session 3 – Theory, Simulation & Modeling

September 04            2017     Monday             2:30 – 3:35 PM

2:30 - 2:55

Marco Bernasconi

 

Atomistic Simulations of GeTe Nanowires

 

2:55 - 3:15

Stephen Elliott

 

Nature of complex bonding structure in phase-change materials

 

3:15 - 3:35

Ider Ronneberger

 

Crystallization of Phase-Change Materials from Molecular Dynamics Simulations

 

 

Session 4 – Superlattice-1

September 04            2017     Monday             4:00 – 5:50 PM

4:00 - 4:20

Hisao Nakamura

 

First-principles theory to understand resistive switch of the GeTe-Sb2Te3 superlattice device by structural phase change and topological phase transition

 

4:20 - 4:45

Noriyuki Miyata

 

Bipolar resistive switching in GeTe/Sb2Te3 superlattice Ipcm

 

4:45 - 5:10

Riccardo Mazzarello

 

Ab Initio Simulations of Chalcogenide Superlattices

 

5:10 - 5:30

Andriy Lotnyk

 

Structure and dynamic of bilayer stacking faults in Ge-Sb-Te layered compounds

 

5:30 - 5:50

Philippe Kowalczyk

 

Impact of Te content on the structure of sputtered GeTe/Sb2Te3 superlattices

 

 

Session 5 – PRAM-1

September 04            2017     Monday             5:55 – 7:20 PM

5:50 - 6:15

Gabriele Navarro

 

OTS Selector Devices: Material Engineering to Improve Switching Performance

 

6:15 - 6:40

Ritesh Agarwal

 

The role of defects on electronic, polar domain and structural switching in phase change materials

 

6:40 - 7:00

Pavan Nukala

 

Power efficient crystal-amorphous switching in GeTe via defect engineering

 

7:00 - 7:20

Raimondo Cecchini

 

Synthesis and electrical analysis of phase change In3Sb1Te2 nanowire-based devices with low power switching

 

 

Ovshinsky Lectureship Award Presentation

September 05            2017     Tuesday            9:00 – 9:35 AM

9:00 - 9:35

Raffaella Calarco

 

Epitaxial Phase-Change Materials

 

 

Session 6

September 05            2017     Tuesday            9:35 – 11:00 AM

9:35 - 10:00

Bart Kooi

 

Unique atomic resolution chemical mapping of phase-change materials with low voltage STEM

 

10:00 - 10:20

Wei Zhang

 

Atomic disorder in crystalline GeSbTe phase change materials

 

10:20 - 10:40

Min Zhu

 

Atom Probe Tomography of Phase Change Materials

 

10:40 - 11:00

M. Spagnolo

 

Sb2Te3 Line-Bridge cells for elemental migration investigation in Phase Change Memory materials

 

 

Session 7 – PRAM-2

September 05            2017     Tuesday            11:20 – 12:50 AM

11:20 - 11:45

Paola Zuliani

 

Phase Change Memories for Embedded Applications: Opportunities and Challenges

 

11:45 - 12:05

Lidu Huang

 

A Self-compensating XPoint Memory Array Architecture

 

12:05 - 12:25

Julia Kluge

 

Voltage and Temperature Stress Analysis of Resistance States Stability in Ge-rich PCM Devices

 

12:25 - 12:50

Hsiang-Lan Lung

 

Towards The Unlimited Cycling Endurance of Phase Change Memory

 

 

Session 8 – Superlattices-2

September 05            2017     Tuesday            2:00 – 3:30 PM

2:00 - 2:25

Muneaki Hase

 

Femtosecond spectroscopic studies on chalcogenide superlattices: structure and topological properties

 

2:25 - 2:50

Do Bang

 

Spin-polarized current-induced resistance switching in [(GeTe)2/(Sb2Te3)1]n superlattices

 

 

2:50 - 3:15

Stefano Cecchi

 

Molecular Beam Epitaxy and Characterization of Ge-Sb-Te Superlattices

 

3:15 - 3:35

Yuta Saito

 

A Sb2Te3/Bi2Te3 Topological insulator heterostructure grown by sputtering

 

 

Session 9 – Neuro & New Devices

September 05            2017     Tuesday            3:50 – 5:25 PM

3:50 - 4:15

Evangelos Eleftheriou

 

Phase-change-memory devices for non-von Neumann computing

 

4:15 - 4:40

Daniele Ielmini

 

Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses

 

4.40 - 5.05

Toshiharu Saiki

 

Natural intelligence with phase-change materials

 

5:05 - 5:35

Enrico Piccinini

 

Stochastic variability of memory switching and basic cryptography applications

 

Conference


03.09.2017 - 05.09.2017

I. Institute of Physics, RWTH Aachen, Germany

Image available on wikimedia commons. Author: Nima j72

The Non-Volatile Memory Technology Symposium (NVMTS 2017) was also be held in Aachen.

European Phase Change and Ovonics Symposium

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