Technical Program
Below you find a list of all invited and contributed talks.
Session 1 – New Applications and Optics
September 04 2017 Monday 8:45 – 10:35 AM
8:45 - 9:10 |
Thomas Taubner |
Switchable nanophotonic elements enabled by Phase-Change Materials
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9:10 - 9:35 |
Robert E. Simpson |
Applying phase change materials to photonics
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9:35 - 9:55 |
Ann-Katrin U. Michel |
Design parameters for phase-change materials for nanostructure resonance tuning
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9:55 - 10:15 |
Boil Pashmakov |
Operating Modes of Chalcogenide Switching Devices Exhibiting Cognitive Behavior
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10:15 - 10:35 |
Arseny M. Alexeev |
Tunable Dielectric Metadevices Enabled by Phase-Change Materials
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Session 2 – Materials
September 04 2017 Monday 10:55 – 12:20 AM
10:55 - 11:20 |
Stefania Privitera |
Role of interfaces on the stability and electrical properties of GeSbTe crystalline structures
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11:20 - 11:40 |
Xinglong Ji |
An ultra-low leakage, highly nonlinear, bidirectional selector for large scale non-volatile memory array
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11:40 - 12:00 |
Abdelmalek Benkouider |
Advanced Design for the Fabrication of High-Density Ge2Sb2Te5 Phase Change Memory by Electrodeposition
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12:00 - 12:20 |
Marcus Liebmann |
Correlating the experimental band structure of Ge2Sb2Te5 to its electronic transport properties
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Session 3 – Theory, Simulation & Modeling
September 04 2017 Monday 2:30 – 3:35 PM
2:30 - 2:55 |
Marco Bernasconi |
Atomistic Simulations of GeTe Nanowires
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2:55 - 3:15 |
Stephen Elliott |
Nature of complex bonding structure in phase-change materials
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3:15 - 3:35 |
Ider Ronneberger |
Crystallization of Phase-Change Materials from Molecular Dynamics Simulations
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Session 4 – Superlattice-1
September 04 2017 Monday 4:00 – 5:50 PM
4:00 - 4:20 |
Hisao Nakamura |
First-principles theory to understand resistive switch of the GeTe-Sb2Te3 superlattice device by structural phase change and topological phase transition
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4:20 - 4:45 |
Noriyuki Miyata |
Bipolar resistive switching in GeTe/Sb2Te3 superlattice Ipcm
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4:45 - 5:10 |
Riccardo Mazzarello |
Ab Initio Simulations of Chalcogenide Superlattices
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5:10 - 5:30 |
Andriy Lotnyk |
Structure and dynamic of bilayer stacking faults in Ge-Sb-Te layered compounds
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5:30 - 5:50 |
Philippe Kowalczyk |
Impact of Te content on the structure of sputtered GeTe/Sb2Te3 superlattices
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Session 5 – PRAM-1
September 04 2017 Monday 5:55 – 7:20 PM
5:50 - 6:15 |
Gabriele Navarro |
OTS Selector Devices: Material Engineering to Improve Switching Performance
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6:15 - 6:40 |
Ritesh Agarwal |
The role of defects on electronic, polar domain and structural switching in phase change materials
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6:40 - 7:00 |
Pavan Nukala |
Power efficient crystal-amorphous switching in GeTe via defect engineering
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7:00 - 7:20 |
Raimondo Cecchini |
Synthesis and electrical analysis of phase change In3Sb1Te2 nanowire-based devices with low power switching
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Ovshinsky Lectureship Award Presentation
September 05 2017 Tuesday 9:00 – 9:35 AM
9:00 - 9:35 |
Raffaella Calarco |
Epitaxial Phase-Change Materials
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Session 6
September 05 2017 Tuesday 9:35 – 11:00 AM
9:35 - 10:00 |
Bart Kooi |
Unique atomic resolution chemical mapping of phase-change materials with low voltage STEM
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10:00 - 10:20 |
Wei Zhang |
Atomic disorder in crystalline GeSbTe phase change materials
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10:20 - 10:40 |
Min Zhu |
Atom Probe Tomography of Phase Change Materials
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10:40 - 11:00 |
M. Spagnolo |
Sb2Te3 Line-Bridge cells for elemental migration investigation in Phase Change Memory materials
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Session 7 – PRAM-2
September 05 2017 Tuesday 11:20 – 12:50 AM
11:20 - 11:45 |
Paola Zuliani |
Phase Change Memories for Embedded Applications: Opportunities and Challenges
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11:45 - 12:05 |
Lidu Huang |
A Self-compensating XPoint Memory Array Architecture
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12:05 - 12:25 |
Julia Kluge |
Voltage and Temperature Stress Analysis of Resistance States Stability in Ge-rich PCM Devices
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12:25 - 12:50 |
Hsiang-Lan Lung |
Towards The Unlimited Cycling Endurance of Phase Change Memory
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Session 8 – Superlattices-2
September 05 2017 Tuesday 2:00 – 3:30 PM
2:00 - 2:25 |
Muneaki Hase |
Femtosecond spectroscopic studies on chalcogenide superlattices: structure and topological properties
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2:25 - 2:50 |
Do Bang |
Spin-polarized current-induced resistance switching in [(GeTe)2/(Sb2Te3)1]n superlattices
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2:50 - 3:15 |
Stefano Cecchi |
Molecular Beam Epitaxy and Characterization of Ge-Sb-Te Superlattices
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3:15 - 3:35 |
Yuta Saito |
A Sb2Te3/Bi2Te3 Topological insulator heterostructure grown by sputtering
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Session 9 – Neuro & New Devices
September 05 2017 Tuesday 3:50 – 5:25 PM
3:50 - 4:15 |
Evangelos Eleftheriou |
Phase-change-memory devices for non-von Neumann computing
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4:15 - 4:40 |
Daniele Ielmini |
Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses
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4.40 - 5.05 |
Toshiharu Saiki |
Natural intelligence with phase-change materials
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5:05 - 5:35 |
Enrico Piccinini |
Stochastic variability of memory switching and basic cryptography applications
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Conference
03.09.2017 - 05.09.2017
I. Institute of Physics, RWTH Aachen, Germany
The conference will be held on the top floor of the SuperC building of the RWTH Aachen University.
Templergraben 57
52062 Aachen
Germany
The Non-Volatile Memory Technology Symposium (NVMTS 2017) was also be held in Aachen.
European Phase Change and Ovonics Symposium
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