Poster Session
All poster contributions will be presented in one poster session on Monday September 04, 1:15-2:30 PM. Please put up your poster on this day between 9:00 AM and 1:00 PM and take it down until 7 PM.
Awards will be given for the top three posters regarding presentation, technical quality and impact. Members of the conference committee will judge the posters during the session.
Posters should be of DIN-A0 size in portrait orientation.
1:15-2:30 pm | POSTER SESSION | ||
POSTERS | |||
PC-01 | Nishant Saxena | Indian Institute of Technology Indore, Indea | Electrical Conductivity and Threshold Switching Dynamics of GeSbTe Phase Change Memory Devices |
PC-02 | Benedikt Kersting | Aachen Inuversity, Germany | Influence of thermal conditions on melt-quenching nanoscale PCM devices |
PC-03 | Xinxing Sun | University Leipzig, Germany | Realization of multi-level states in phase-change thin films by very short laser pulse irradiation |
PC-04 | C. Ruiz de Galarreta | University of Exeter, UK | The design of practicable beam steering and beam shaping phase-change metasurfaces working at telecom frequencies |
PC-05 | Yat-Yin Au | University of Exeter, UK | Infrared Phase-Change Meta-Devices with In-Situ Switching |
PC-06 | Martin Lewin | RWTH Aachen University, Germany | Identification of different domains in Sb2Te3 thin films and hexagonal platelets using infrared near-field microscopy |
PC-07 | S. García-Cuevas Carrillo | University of Exeter, UK | Towards A Phase-Change Metamaterial Subtractive CMY Display |
PC-08 | Isom Hilmi | Leipzig University, Germany | Pulsed laser deposition of epitaxial chalcogenide thin films and superlattice structures thereof |
PC-09 | Satoshi Sumi | Toyota Technological Institute, Japan | Magneto-capacitance of [GeTe/Sb2Te3] supper lattice film |
PC-10 | Hiroki Shirakawa | Nagoya University, Japan | The atomic configuration of the GeTe/Sb2Te3 superlattice with bandgap |
PC-11 | Kirill V. Mitrofanov | National Institute of Advanced Industrial Science and Technology (AIST), Japan | Multi-level switching in GeTe/Sb2Te3 iPCM |
PC-12 | Oana Cojocaru-Mirédin | RWTH Aachen University, Germany | Nanoscale investigating of GeTe-Sb2Te3 superlattices by atom probe tomography |
PC-13 | Peter C. Schmitz | RWTH Aachen University, Germany | Massive topological Dirac Semimetals from GeSbTe van-der-Waals Heterostructures |
PC-14 | Henning Hollermann | RWTH Aachen University, Germany | Stoichiometry determination of chalcogenide superlattices by means of X-ray diffraction and its limits |
PC-15 | Paul Vermeulen | University of Groningen, The Netherlands | Growth and characterization of telluride multilayers using Pulsed Laser Deposition |
PC-16 | Marvin Kaminski | RWTH Aachen University, Germany | A first step towards MBE-grown SnTe-based IPCMs: growth and characterization of SnTe(111) on Sb2Te3(0001) |
PC-17 | Pierre Noé | Université Grenoble, France | Impact of surface oxidation on the crystallization mechanisms in GeTe and Ge2Sb2Te5 thin films |
PC-18 | Shogo Hatayama | Tohoku University, Japan | Inverse resistance change behavior of Cr2Ge2Te6 phase change material |
PC-19 | Yi Shuang | Tohoku University, Japan | Phase Change Behavior of N-doped Cr-Ge-Te Film |
PC-20 | Bin Chen | University of Groningen, The Netherlands | Dynamics of Ge2Sb2Te5 nanoparticles on graphene |
PC-21 | Huanglong L | Tsinghua University, Cambridge University, China, UK | Density functional study of a-GeSex Selectors for PRAM |
PC-22 | Johannes Reindl | RWTH Aachen University, Germany | Disorder governed metal insulator transition in Sn1Sb2Te4 |
PC-23 | Konstantinos Konstantinou | University of Cambridge, UK | Ab initio modelling of ion implantation for doping of phase-change memory materials |
PC-24 | Yongwoo Kwon | Hongik University, Korea | Modeling of crystallization by phase-field method |
PC-25 | Martin Salinga | RWTH Aachen University, Germany | Supercooled Liquid and Glass Formation in Phase Change Materials |
PC-26 | Felix-Cosmin Mocanu | University of Cambridge, UK | A machine-learned interatomic potential for Ge-Sb-Te phase-change materials |
PC-27 | Shuai Wei | RWTH Aachen University, Germany | X-Ray Photon Correlation Spectroscopy Reveals Distinct Atomic-scale Relaxation Dynamics Behaviors in Amorphous Phase-Change Materials |
PC-28 | Matthias Dück | RWTH Aachen University, Germany | Characterization and Transport Properties of Metastable GeSb2Te4 Thin Films Exhibiting a Decoupling of Microstructure and Disorder |
PC-29 | M. Gallard | Aix Marseille Univ, Université de Toulon, France | Study of the microstructure and stress induced during the crystallization of GeTe thin films |
PC-30 | Sebastian Walfort | RWTH Aachen University, Germany | A Micro-Heater Structure for Measuring Crystallization and Relaxation Kinetics in Nanoscale Phase-Change Devices |
PC-31 | Matteo Cagnoni | RWTH Aachen University, Germany | Thermoelectric performance of phase-change materials: an atomistic point of view |
PC-32 | Albert Ratajczak | Peter Gruenberg Institute, Germany | Characteristics of epitaxial trigonal Ge1Sb2Te4 (0001) |
PC-33 | Ming Xu | Huazhong University of Science and Technology (HUST), China | Pressure Tunes the Resonant Bonding in Chalcogenides |
PC-34 | Nobuki Inoue | National Institute of Advanced Industrial Science and Technology (AIST), Japan | First-principles study of structural transition pathways of GeTe/Sb2Te3 superlattices and their I-V characteristics |
PC-35 | Simone Raoux | Helmholtz-Zentrum Berlin für Materialien und Energie, Germany | Phase transitions in Ge and Si by metal-induced crystallization |
PC-36 | Daniele Dragoni | Universita’ di Milano – Bicocca, Italy | First principles study of the amorphous phase of the In2Te3 compound |
Conference
03.09.2017 - 05.09.2017
I. Institute of Physics, RWTH Aachen, Germany
The conference will be held on the top floor of the SuperC building of the RWTH Aachen University.
Templergraben 57
52062 Aachen
Germany
The Non-Volatile Memory Technology Symposium (NVMTS 2017) was also be held in Aachen.
European Phase Change and Ovonics Symposium
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- Last update: November 04, 2022, 09:47